MGF0904A datasheet, fet equivalent, Mitsubishi

Features and benefits

* High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
* High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
* High power added efficiency P.A.E=40%(TYP.).

Application

FEATURES
* High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
* High power gain Gp=13.0dB(TYP.) @f=1.65GHz.

Description

The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES
* High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
* High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
* High power a.

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