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M81019FP - 1200V HIGH VOLTAGE HALF BRIDGE DRIVER

General Description

M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.

Key Features

  • ¡Floating supply voltage up to 1200V ¡Low quiescent power supply current ¡Separate sink and source current output up to ±1A (typ) ¡Active Miller effect clamp NMOS with sink current up to.
  • 1A (typ) ¡Input noise filters ¡Over-current detection and output shutdown ¡High side under voltage lockout ¡FO pin which can input and output Fault signals to commu- nicate with controllers and synchronize the shut down with other phases ¡Pb-free ¡24-Lead SSOP package PIN.

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MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driver for half bridge applications.