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M5M5165P-70 - 64K-Bit CMOS Static RAM

Description

The M5M5165P is a 65,536-bit CMOS static RAM organized as 8,192 words by 8 bits which is fabricated using high-performance double polysilicon CMOS technology.

The use of resistive load NMOS cells and CMOS periferals result in a high-density and low-power static RAM.

Features

  • Type Access time (max) Power supply current Active (max) Stand-by (max) M5M5165P-70 M5M5165P-l0 M5M5165P-12 M5M5165P-15 M5M5165P-70L M5M5165P-l0L M5M5165P-12L M5M5165P-15L 70ns lOOns 120ns 150ns 70ns lOOns 120ns 150ns 50mA 2mA 100,uA.
  • Single +5V Power Supply.
  • Fully Static Operation: No Clocks, No Refresh.
  • Data-Hold on +2V Power Supp.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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~SMs16sP-70, -10, MITSUBISHI LSls -12, -15, -70L, -10L, -12L, -lsL 6SS36-BIT (8192 WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5165P is a 65,536-bit CMOS static RAM organized as 8,192 words by 8 bits which is fabricated using high-performance double polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periferals result in a high-density and low-power static RAM. It is ideal for the memory systems which require simple interface. The stand-by current is low enough for a battery backup application. It is mounted in a standard 28 pin package and configured in an industrial standard 8K x 8-bit pinout.
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