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M5M417400CJ-7 - FAST PAGE MODE DRAM

Download the M5M417400CJ-7 datasheet PDF. This datasheet also covers the M5M417400CJ-5 variant, as both devices belong to the same fast page mode dram family and are provided as variant models within a single manufacturer datasheet.

Description

This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S RAS access time (max. ns) 50 60 70 CAS access time (max. ns) 13 15 20 Address access time (max. ns) 25 30 35 OE access time (max. ns) 13 15 20 C ycle time (min. ns) 90 110 130 Power dissipa- tion (typ. mW) 655 540 475 XX=J, TP.
  • Standard 26 pin SOJ, 26 pin TSOP.
  • Single 5V ± 10.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M5M417400CJ-5-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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M5M417805CJ Hyper Page Mode 16M-Bit DRAM Mitsubishi Electric
M5M417805DJ EDO Mode 16M-Bit DRAM Mitsubishi Electric

Other Datasheets by Mitsubishi Electric

Part Number Description
M5M417400CJ-7S FAST PAGE MODE DRAM
M5M417400CJ-5 FAST PAGE MODE DRAM
M5M417400CJ-5S FAST PAGE MODE DRAM
M5M417400CJ-6 FAST PAGE MODE DRAM
M5M417400CJ-6S FAST PAGE MODE DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI LSIs M5M417400CJ,TP-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer metal process combined with twin-well CMOS technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. FEATURES Type Name M5M417400CXX-5,-5S M5M417400CXX-6,-6S M5M417400CXX-7,-7S RAS access time (max.ns) 50 60 70 CAS access time (max.
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