Datasheet4U Logo Datasheet4U.com

M5K4164ANP-12 - 64K-Bit DRAM

Description

This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential.

Features

  • High speed Type name M5K4164ANP-12 M5K4164ANP-15 Access time (max) (ns) 120 150 Cycle time (min) (ns) 220 260 Power dissipation (typ) (mW) 175 150.
  • Single 5V±100/0-supply.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Mitsubishi Electric

Part Number Description
M5K4164ANP-15 64K-Bit DRAM
M5K4164ANP-20 64K-Bit DRAM
M5K4164AND-12 64K-Bit DRAM
M5K4164AND-15 64K-Bit DRAM
M5K4164ANL-12 64K-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MITSUBISHI LSls M5K4164ANP-12, -15 65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65 536-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process technology and a single-transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities.
Published: |