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M2V64S40BTP-8A - 64M bit Synchronous DRAM

Download the M2V64S40BTP-8A datasheet PDF. This datasheet also covers the M2V64S20BTP-7 variant, as both devices belong to the same 64m bit synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface.

All inputs and outputs are referenced to the rising edge of CLK.

Features

  • - Single 3.3v ± 0.3v power supply - Clock frequency 125MHz /100MHz - Fully synchronous operation referenced to clock rising edge - 4 bank operation controlled by BA0, BA1 (Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/Full Page (programmable) - Burst type- sequential / interleave (programmable) - Column access - random - Burst Write / Single Write (programmable) - Auto precharge / All bank precharge controlled by A10 - Auto refresh and Self refresh - 4096 refresh cycle.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M2V64S20BTP-7-Mitsubishi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Mitsubishi Electric

Part Number Description
M2V64S40BTP-8 64M bit Synchronous DRAM
M2V64S40BTP-8L 64M bit Synchronous DRAM
M2V64S40BTP-10 64M bit Synchronous DRAM
M2V64S40BTP-10L 64M bit Synchronous DRAM
M2V64S40BTP-6 64M bit Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SDRAM (Rev.1.2) Apr. '99 64M bit Synchronous DRAM MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT) DESCRIPTION The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of CLK. The M2V64S20BTP, M2V64S30BTP, M2V64S40BTP achieve very high speed data rate up to 125MHz, and are suitable for main memory or graphic memory in computer systems. FEATURES - Single 3.3v ± 0.
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