K2973 datasheet, 2sk2973 equivalent, Mitsubishi

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Features and benefits

* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
* High efficiency:55% typ.
* Source case type SOT-89 package (connected internally to source) 1.6±0.2.

Application

OUTLINE DRAWING 4.6MAX FEATURES
* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
* High efficiency:55%.

Description

2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX FEATURES
* High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm
* High efficiency:55% typ.
* Source case type .

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