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Mitsubishi

CMH1200DC-34S Datasheet Preview

CMH1200DC-34S Datasheet

HVIGBT Modules

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< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
CMH1200DC-34S
I 1200AC·································································
V 1700VCES···························································
2-element in a Pack
Insulated Type
CSTBT
SiC Schottky-Barrier Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Apr. 2018 (HVM-1066-E)
1




Mitsubishi

CMH1200DC-34S Datasheet Preview

CMH1200DC-34S Datasheet

HVIGBT Modules

No Preview Available !

< HVIGBT MODULE >
CMH1200DC-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICRM
IE
IERM
I2t
Ptot
Viso
Tjop
Tstg
tpsc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Surge current load integral
Maximum power dissipation (Note 3)
Isolation voltage
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V
VCE = 0V, Tj = 25°C
DC, Tc = 110°C
Pulse
DC
Pulse
Tj = 125°C, VR = 0V, tp = 10ms
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
(Note 1)
(Note 1)
VCC = 1200 V, VCE VCES, VGE = 15V, Tj = 150°C
Ratings
1700
±20
1200
2400
1200
2400
6750
4000
50 ~ +150
50 ~ +150
10
Unit
V
V
A
A
A
A
kA2s
W
V
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
ICES
VGE(th)
IGES
Cies
Coes
Cres
QG
VCEsat
td(on)
tr
Eon(10%)
Eon
td(off)
tf
Eoff(10%)
Eoff
Item Conditions
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
(Note 6)
Turn-on switching energy
(Note 5)
Turn-off delay time
Turn-off fall time
Turn-off switching energy (Note 6)
Turn-off switching energy (Note 5)
VCE = VCES, VGE = 0V
VCE = 10V, IC = 120mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE = 10V, VGE = 0V, f = 100kHz
Tj = 25°C
VCC = 850V, IC = 1200A, VGE = 15V
IC = 1200 A
VGE = 15 V
(Note 4)
VCC = 850 V
IC = 1200 A
VGE = ±15 V
RG(on) = 1.3 Ω
Ls = 100 nH
Inductive load
VCC = 850 V
IC = 1200 A
VGE = ±15 V
RG(off) = 3.3 Ω
Ls = 100 nH
Inductive load
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Min
0.5
Limits
Typ
36
150
180
6.0
216
8.0
1.6
12.0
1.95
2.25
2.30
0.50
0.50
0.50
0.14
0.15
0.15
110
135
140
130
155
160
1.20
1.30
1.32
0.12
0.15
0.17
200
280
310
260
360
400
Max
0.5
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
mJ
mJ
µs
µs
mJ
mJ
Apr. 2018 (HVM-1066-E)
2


Part Number CMH1200DC-34S
Description HVIGBT Modules
Maker Mitsubishi
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