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CM900DUC-24S Datasheet Preview

CM900DUC-24S Datasheet

IGBT Modules

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<IGBT Modules>
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .......................................9 0 0 A
Collector-emitter voltage VCES ..........................1 2 0 0 V
Maximum junction temperature T j ma x .................... 1 7 5 °C
Flat base Type
Copper base plate (non-plating)
RoHS Directive compliant
dual switch (Half-Bridge)
Recognized under UL1557, File E323585
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
C2
(Cs2)
C2E1
C1
(Cs1)
Di2
G2 Tr2
Di1
Tr1
E1
(Es1)
E2
(Es2) E2
C1
G1
Publication Date : June 2015
CMH-10478
Ver.1.3
1
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2




Mitsubishi

CM900DUC-24S Datasheet Preview

CM900DUC-24S Datasheet

IGBT Modules

No Preview Available !

<IGBT Modules>
CM900DUC-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
IE
IERM
(Note1)
(Note1)
Visol
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
Isolation voltage
C-E short-circuited
DC, TC=125 °C (Note2, 4)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tjmax
TCmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note4)
T j o p Operating junction temperature Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)
Symbol
Item
Conditions
ICES
IGES
VGE(th)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCEsat
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V (Note.1)
EC
Emitter-collector voltage
t (Note1)
rr
Q (Note1)
rr
Eon
Eoff
E (Note1)
rr
RCC'+EE'
rg
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=90 mA, VCE=10 V
IC=900 A (Note5) ,
VGE=15 V,
Terminal=chip
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=600 V, IC=900 A, VGE=15 V
VCC=600 V, IC=900 A, VGE=±15 V,
RG=0 Ω, Inductive load
IE=900 A (Note5) ,
T j =25 °C
G-E short-circuited,
T j =125 °C
Terminal=chip
T j =150 °C
VCC=600 V, IE=900 A, VGE=±15 V,
RG=0 Ω, Inductive load
VCC=600 V, IC/IE=900 A,
VGE=±15 V, RG=0 Ω, T j =150 °C,
Inductive load
Main terminal-chip, per switch, TC=25 °C (Note4)
Per switch
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1200
± 20
900
1800
6520
900
1800
2500
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
1.55
1.75
1.80
-
-
-
2300
-
-
-
-
1.65
1.65
1.65
-
50
68.9
183
73.3
0.286
2.2
Max.
1
3.0
6.6
1.90
-
-
90
18
1.5
-
900
250
950
350
2.10
-
-
450
-
-
-
-
-
-
Unit
V
V
A
W
A
V
°C
°C
°C
Unit
mA
μA
V
V
nF
nC
ns
V
ns
μC
mJ
mJ
mΩ
Ω
Publication Date : June 2015
CMH-10478
Ver.1.3
2


Part Number CM900DUC-24S
Description IGBT Modules
Maker Mitsubishi
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