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Mitsubishi

CM50DU-24F Datasheet Preview

CM50DU-24F Datasheet

IGBT

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CM50DU-24F
MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
¡IC ..................................................................... 50A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
7
17
Tc measured point
94
80 ±0.25
23 23
2–φ6.5
MOUNTING HOLES
C2E1
E2
C1
Dimensions in mm
4
3–M5NUTS
12mm deep
12
16 2.5 25 2.5 16
LABEL
13.5
TAB #110. t=0.5
C2E1
RTC
E2
RTC
C1
CIRCUIT DIAGRAM
Feb. 2009




Mitsubishi

CM50DU-24F Datasheet Preview

CM50DU-24F Datasheet

IGBT

No Preview Available !

MITSUBISHI IGBT MODULES
CM50DU-24F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Charged part to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Ratings
1200
±20
50
100
50
100
320
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min. Typ.
——
VGE(th) Gate-emitter threshold voltage IC = 5.0mA, VCE = 10V
56
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
±VGE = VGES, VCE = 0V
IC = 50A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 600V, IC = 50A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 50A
VGE = ±15V
RG = 6.3, Inductive load
IE = 50A
IE = 50A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
6.3
1.8
1.9
550
2.1
0.07
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Max.
1
7
20
2.4
20
0.85
0.5
100
50
300
300
150
3.2
0.39
0.70
0.31*3
63
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Feb. 2009
2


Part Number CM50DU-24F
Description IGBT
Maker Mitsubishi
PDF Download

CM50DU-24F Datasheet PDF






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