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Mitsubishi

CM400ST-24S1 Datasheet Preview

CM400ST-24S1 Datasheet

IGBT

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<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…..............................… 4 0 0 A
Collector-emitter voltage VCES ..............................…
BRIDGE 1 2 0 0 V
AC SWITCH 6 5 0 V
Maximum junction temperature T vjmax ........................ 1 7 5 °C
●Flat base Type
●Copper base plate
●Tin plating pin terminals
●RoHS Directive compliant*
fourpack (BRIDGE & AC SWITCH)
●Recognized under UL1557, File E323585
APPLICATION
3level inverter, UPS, PV
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL t=0.8
Publication Date : September 2016
CMH-10632-D
Ver.1.4
SECTION A
PC
Cs1
Tr1
G1
Es1
Cs2 Tr2
G2
Di1
Es23
Di2
Di4
G3
Cs3 Tr3
Di3
AC
N
Es4
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
G4
Tr4
Cs4
TH1
TH2
BRIDGE
- IGBT Tr1, Tr4
- DIODE Di1, Di4
AC SWITCH
- IGBT Tr2, Tr3
- DIODE Di2, Di3
1




Mitsubishi

CM400ST-24S1 Datasheet Preview

CM400ST-24S1 Datasheet

IGBT

No Preview Available !

<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)
BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
Gate-emitter voltage
C-E short-circuited
IC Collector current
ICRM
Pt ot Total power dissipation
DC, TC=103 °C (Note2, 4)
Pulse, Repetitive, VGE15 V
TC=25 °C (Note2, 4)
(Note3)
IE
IERM
(Note1)
(Note1)
Emitter current
DC (Note2)
Pulse, Repetitive (Note3)
AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
Gate-emitter voltage
C-E short-circuited
IC
ICRM
Ptot
IE
IERM
(Note1)
(Note1)
Collector current
Total power dissipation
Emitter current
DC, TC=95°C (Note2, 4)
Pulse, Repetitive, VGE15 V
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
(Note3)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tvjmax
TCmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note4)
Tvjop
Operating junction temperature
Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T v j=25 °C, unless otherwise specified)
BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)
Symbol
Item
Conditions
ICES
IGES
VGE(th)
VCEsat
(Terminal)
VCEsat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note1)
EC
(Terminal)
V (Note1)
EC
(Chip)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=40mA, VCE=10 V
IC=400 A, VGE=15 V,
Auxiliary Terminal
(Note5)
IC=400 A, VGE=15 V,
Chip
(Note5)
T v j =25 °C
T v j =125 °C
T v j =150 °C
T v j =25 °C
T v j =125 °C
T v j =150 °C
VCE=10 V, G-E short-circuited
VCC(P-C)=VCC(C-N)=300 V, IC=400A, VGE=15 V
VCC(P-C)=VCC(C-N)=300 V, IC=400 A, VGE=±15 V,
RG=1.6 Ω, Inductive load
IE=400 A, G-E short-circuited,
Auxiliary Terminal
(Note5)
IE=400 A, G-E short-circuited,
Chip
(Note5)
T v j =25 °C
T v j =125 °C
T v j =150 °C
T v j =25 °C
T v j =125 °C
T v j =150 °C
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1200
± 20
400
800
2340
400
800
Rating
650
± 20
400
800
1415
400
800
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
840
-
-
-
-
2.60
2.16
2.10
2.50
2.06
2.00
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
40
8.0
0.67
-
700
200
600
150
3.40
-
-
3.30
-
-
Unit
V
V
A
W
A
Unit
V
V
A
W
A
Unit
V
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
V
V
Publication Date : September 2016
CMH-10632-D
Ver.1.4
2


Part Number CM400ST-24S1
Description IGBT
Maker Mitsubishi
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CM400ST-24S1 Datasheet PDF






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