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Mitsubishi

CM400DX-12A Datasheet Preview

CM400DX-12A Datasheet

IGBT

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<IGBT Modules>
CM400DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
dual switch (Half-Bridge)
Collector current IC .............…..............................…
Collector-emitter voltage VCES ..............................…
Maximum junction temperature Tjmax ........................
Flat base Type
Copper base plate (non-plating)
RoHS Directive compliant
Recognized under UL1557, File E323585
400A
600V
1 5 0 °C
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL t=0.8
SECTION A
Publication Date : May 2014
39 38
47 Tr2
Di2
48
NTC
Th
12
INTERNAL CONNECTION
Di1
Tr1
24
23
15 16 22
Terminal code
1 TH1
2 TH2
15 G1
16 Es1
22 Cs1
23 C2E1
24 C2E1
38 G2
39 Es2
47 E2
48 C1
1
Tolerance otherwise specified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
: Dimensions with a
Tolerance of




Mitsubishi

CM400DX-12A Datasheet Preview

CM400DX-12A Datasheet

IGBT

No Preview Available !

<IGBT Modules>
CM400DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
IE
IERM
(Note1)
(Note1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
C-E short-circuited
DC, TC=60 °C (Note2, 4)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
T j Junction temperature
-
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
ICES
IGES
VGE(th)
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCEsat
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V (Note1)
EC
Emitter-collector voltage
t (Note1)
rr
Q (Note1)
rr
Eon
Eoff
E (Note1)
rr
RCC'+EE'
rg
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=40 mA, VCE=10 V
IC=400 A, VGE=15 V (Note5)
Refer to the figure of test circuit
IC=400 A, VGE=15 V, chip (Note5)
T j =25 °C
T j =125 °C
VCE=10 V, G-E short-circuited
VCC=300 V, IC=400 A, VGE=15 V
VCC=300 V, IC=400 A, VGE=±15 V,
RG=3.6 Ω, Inductive load
IE=400 A, G-E short-circuited (Note5) T j =25 °C
Refer to the figure of test circuit
T j =125 °C
IE=400 A, G-E short-circuited, chip (Note5)
VCC=300 V, IE=400 A, VGE=±15 V,
RG=3.6 Ω, Inductive load
VCC=300 V, IC=IE=400 A,
VGE=±15 V, RG=3.6 Ω, T j =125 °C,
Inductive load
Main terminals-chip, per switch,
TC=25 °C (Note4)
Per switch, TC=25 °C (Note4)
Min.
-
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
600
± 20
400
800
1340
400
800
Rating
2500
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6
1.7
1.9
1.6
-
-
-
1100
-
-
-
-
2.0
1.95
1.9
-
11
13.5
23
3.8
1.1
0
Max.
1.0
0.5
7
2.1
-
-
50
5.3
1.6
-
200
200
400
600
2.8
-
-
200
-
-
-
-
-
-
Unit
V
V
A
W
A
Unit
V
°C
Unit
mA
μA
V
V
nF
nC
ns
V
ns
μC
mJ
mJ
mΩ
Ω
Publication Date : May 2014
2


Part Number CM400DX-12A
Description IGBT
Maker Mitsubishi
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CM400DX-12A Datasheet PDF






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