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Mitsubishi

CM200DX-24S Datasheet Preview

CM200DX-24S Datasheet

IGBT Modules

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< IGBT MODULES >
CM200DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................… 2 0 0 A
Collector-emitter voltage VCES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
Flat base Type
Copper base plate (non-plating)
Tin plating pin terminals
Dual switch (Half-Bridge)
RoHS Directive compliant
Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
t=0.8
Publication Date : December 2013
INTERNAL CONNECTION
39 38
47 Tr2
Di2
48
NTC
Th
12
Di1
Tr1
24
23
15 16 22
Terminal code
1 TH1
2 TH2
15 G1
16 Es1
22 Cs1
23 C2E1
24 C2E1
38 G2
39 Es2
47 E2
48 C1
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
1




Mitsubishi

CM200DX-24S Datasheet Preview

CM200DX-24S Datasheet

IGBT Modules

No Preview Available !

< IGBT MODULES >
CM200DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
VCES
VGES
IC
ICRM
Ptot
IE
IERM
(Note1)
(Note1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, TC=119 °C (Note2, 4)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
MODULE
Symbol
Item
Conditions
Visol
Tjmax
TCmax
Isolation voltage
Maximum junction temperature
Maximum case temperature
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Instantaneous event (overload)
(Note4)
Tjop
Operating junction temperature
Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
ICES
IGES
VGE(th)
VCEsat
(Terminal)
VCEsat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note1)
EC
(Terminal)
V (Note1)
EC
(Chip)
t (Note1)
rr
Q (Note1)
rr
Eon
Eoff
E (Note1)
rr
RCC'+EE'
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=20 mA, VCE=10 V
IC=200 A, VGE=15 V,
Refer to the figure of test circuit
(Note5)
IC=200 A,
VGE=15 V,
(Note5)
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=600 V, IC=200 A, VGE=15 V
VCC=600 V, IC=200 A, VGE=±15 V,
RG=0 , Inductive load
IE=200 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
IE=200 A,
G-E short-circuited,
(Note5)
VCC=600 V, IE=200 A, VGE=±15 V,
RG=0 , Inductive load
VCC=600 V, IC=IE=200 A,
VGE=±15 V, RG=0 , T j =150 °C,
Inductive load
Main terminals-chip, per switch,
TC=25 °C (Note4)
Per switch
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1200
± 20
200
400
1500
200
400
Rating
2500
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
1.80
2.00
2.05
1.70
1.90
1.95
-
-
-
466
-
-
-
-
1.80
1.80
1.80
1.70
1.70
1.70
-
10.7
30.7
21.5
14.2
-
9.8
Max.
1.0
0.5
6.6
2.25
-
-
2.15
-
-
20
4.0
0.33
-
800
200
600
300
2.25
-
-
2.15
-
-
300
-
-
-
-
1.1
-
Unit
V
V
A
W
A
Unit
V
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
V
V
ns
μC
mJ
mJ
m
Publication Date : December 2013
2


Part Number CM200DX-24S
Description IGBT Modules
Maker Mitsubishi
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CM200DX-24S Datasheet PDF






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