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Mitsubishi

CM1800HCB-34N Datasheet Preview

CM1800HCB-34N Datasheet

High Voltage Insulated Gate Bipolar Transistor

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<High Voltage Insulated Gate Bipolar TransistorHVIGBT >
CM1800HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM2400HCB-34N
IC ·························································· 1800 A
VCES ···················································· 1700 V
1-element in pack
Insulated type
CSTBTTM / Soft recovery diode
AlSiC baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Publication Date : December 2015
(HVM-1052-C)
1




Mitsubishi

CM1800HCB-34N Datasheet Preview

CM1800HCB-34N Datasheet

High Voltage Insulated Gate Bipolar Transistor

No Preview Available !

< High Voltage Insulated Gate Bipolar TransistorHVIGBT >
CM1800HCB-34N
HIGH POWER SWITHCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
VCES
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Tj
Tjop
Tstg
tpSC
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
(Note 3)
Maximum short circuit pulse width
Conditions
VGE = 0V, Tj = 25 °C
VCE = 0V, Tj = 25 °C
DC, Tc = 80 °C
Pulse (Note 1)
DC
Pulse (Note 1)
Tc = 25 °C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC =1000V, VCE ≤ VCES, VGE =15V, Tj =125°C
Ratings
1700
± 20
1800
3600
1800
3600
13800
4000
40 ~ +150
40 ~ +125
40 ~ +125
10
Unit
V
V
A
A
A
A
W
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
ICES
VGE(th)
IGES
Cies
Coes
Cres
QG
VCEsat
td(on)
tr
Eon(10%)
td(off)
tf
Eoff(10%)
VEC
trr
Qrr
Erec(10%)
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
(Note 5)
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
Conditions
Limits
Min Typ Max
VCE = VCES, VGE = 0 V
Tj = 25 °C — —
8
Tj = 125 °C 6.0 16
VCE = 10 V, IC = 180 mA, Tj = 25 °C
VGE = VGES, VCE = 0V, Tj = 25°C
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25 °C
5.5 6.5 7.5
-0.5
0.5
352
19.2
5.6
VCC = 900 V, IC = 1800 A, VGE = ±15 V
IC = 1800 A (Note 4)
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
24.4
2.00
2.20
2.60
VCC = 900 V, IC = 1800 A
VGE = ±15 V, RG(on) = 0.9 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
— — 1.50
— — 0.60
0.56
VCC = 900 V, IC = 1800 A
VGE = ±15 V, RG(off) = 1.3 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
IE = 1800 A (Note 4)
VGE = 0 V
VCC = 900 V, IE = 1800 A
VGE = ±15 V, RG(on) = 0.9 Ω
Tj = 125 °C, Ls = 80 nH
Inductive load
Tj = 25 °C
Tj = 125 °C
0.50
2.10
1.75
700
3.00
0.60
2.90
1.50
0.44
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
µs
µs
J
V
µs
µC
J
THERMAL CHARACTERISTICS
Symbol
Item
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Thermal resistance
Contact thermal resistance
Conditions
Limits
Min Typ Max
Unit
Junction to Case, IGBT part
— — 9.0 K/kW
Junction to Case, FWDi part
— — 13.0 K/kW
·Case to heat sink, grease = 1W/m k, D(c-s) = 100m 7.0 K/kW
Publication Date : December 2015
2


Part Number CM1800HCB-34N
Description High Voltage Insulated Gate Bipolar Transistor
Maker Mitsubishi
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