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Mitsubishi

CM1800DY-34S Datasheet Preview

CM1800DY-34S Datasheet

IGBT MODULES

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<IGBT Modules>
CM1800DY-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
dual switch (Half-Bridge)
Collector current IC .............….......................… 1 8 0 0 A
Collector-emitter voltage VCES ......................… 1 7 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
Flat base Type
Aluminum base plate
RoHS Directive compliance
Recognized under UL1557, File E323585
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
Publication Date : September 2014
CMH-10352
Ver.1.1
1
INTERNAL CONNECTION
E2
(Es2)
G2
C2
(Cs2)
Tr2
E2 E2
Di2 C2E1
C1 C1
Di1
Tr1
C2E1
TH2
G1 E1
C1 TH1
(Es1) (Cs1)




Mitsubishi

CM1800DY-34S Datasheet Preview

CM1800DY-34S Datasheet

IGBT MODULES

No Preview Available !

<IGBT Modules>
CM1800DY-34S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
VCES
Collector-emitter voltage
G-E short-circuited
VGES
IC
ICRM
Ptot
IE
IERM
(Note.1)
(Note.1)
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
C-E short-circuited
DC, TC=105 °C (Note2, 4)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
Pulse, Repetitive (Note3)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tjmax
Tcmax
Maximum junction temperature
Maximum case temperature
Instantaneous event (overload)
(Note4)
Tjopr
Operating junction temperature
Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
ICES
IGES
VGE(th)
VCEsat
(Terminal)
VCEsat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note1)
EC
(Terminal)
V (Note1)
EC
(Chip)
t (Note1)
rr
Q (Note1)
rr
Eon
Eoff
E (Note1)
rr
RCC'+EE'
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=180 mA, VCE=10 V
IC=1800 A, VGE=15 V,
Refer to the figure of test circuit
(Note5)
IC=1800 A,
VGE=15 V,
(Note5)
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=1000 V, IC=1800 A, VGE=15 V
VCC=1000 V, IC=1800 A, VGE=±15 V,
RG=0 Ω, Inductive load
IE=1800 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
IE=1800 A,
G-E short-circuited,
(Note5)
VCC=1000 V, IE=1800 A, VGE=±15 V,
RG=0 Ω, Inductive load
VCC=1000 V, IC=IE=1800 A,
VGE=±15 V, RG=0 Ω,
T j =150 °C, Inductive load
Main terminals -chip, per switch,
T C =25 °C (Note4)
Per switch
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1700
± 20
1800
3600
11535
1800
3600
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
2.20
2.40
2.45
2.10
2.30
2.35
-
-
-
8400
-
-
-
-
2.00
2.10
2.05
1.90
2.00
1.95
-
80
722.8
509.5
509.2
0.11
1.1
Max.
1.0
5.0
6.6
2.70
-
-
2.60
-
-
460
48
8.0
-
1100
200
950
500
2.50
-
-
2.40
-
-
350
-
-
-
-
-
-
Unit
V
V
A
W
A
Unit
V
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
V
V
ns
μC
mJ
mJ
mΩ
Ω
Publication Date : September 2014
CMH-10352
Ver.1.1
2


Part Number CM1800DY-34S
Description IGBT MODULES
Maker Mitsubishi
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