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Mitsubishi

CM150DU-34KA Datasheet Preview

CM150DU-34KA Datasheet

IGBT

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CM150DU-34KA
MITSUBISHI IGBT MODULES
CM150DU-34KA
HIGH POWER SWITCHING USE
IC ................................................................... 150A
VCES .......................................................... 1700V
Insulated Type
2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
(7.5)
TC measured point
108
93 ±0.25
(7.5)
14 14 14
Dimensions in mm
CM
C2E1
E2
C1
25
25
21.5
2.5
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
4
18 7 18 7 18
2.8
LABEL
C2E1 E2
C1
CIRCUIT DIAGRAM
25.7
0.5
0.5
0.5
0.5
Feb. 2009




Mitsubishi

CM150DU-34KA Datasheet Preview

CM150DU-34KA Datasheet

IGBT

No Preview Available !

MITSUBISHI IGBT MODULES
CM150DU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Conditions
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Ratings
1700
±20
150
300
150
300
1100
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
400
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
ICES
Collector cutoff current
Test conditions
VCE = VCES, VGE = 0V
Limits
Min. Typ.
——
VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V
4 5.5
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance*1
Contact thermal resistance
Thermal resistance
±VGE = VGES, VCE = 0V
IC = 150A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 1000V, IC = 150A, VGE = 15V
Tj = 25°C
Tj = 125°C
VCC = 1000V, IC = 150A
VGE = ±15V
RG = 2.1, Inductive load
IE = 150A
IE = 150A, VGE = 0V, Tj = 25°C
IE = 150A, VGE = 0V, Tj = 125°C
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound applied*2 (1/2 module)
Case temperature measured point is just under the chips
3.2
3.8
675
7.7
2.2
0.04
Note 1. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Max.
1
7
0.5
4.0
21
3.6
1.1
450
200
550
800
600
4.6
0.11
0.18
0.07*3
Unit
mA
V
µA
V
nF
nC
ns
ns
µC
V
V
K/W
Feb. 2009
2


Part Number CM150DU-34KA
Description IGBT
Maker Mitsubishi
PDF Download

CM150DU-34KA Datasheet PDF






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