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Mitsubishi

CM1000DXL-24S Datasheet Preview

CM1000DXL-24S Datasheet

IGBT

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< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….......................… 9 0 0 A *
Collector-emitter voltage VCES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x .............. 1 7 5 °C
Flat base Type
Copper base plate (non-plating)
Tin plating pin terminals
Dual switch (Half-Bridge)
RoHS Directive compliant
Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
t=0.8
SECTION A
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3
±0.2
over 3 to 6
±0.3
over 6 to 30 ±0.5
over 30 to 120
±0.8
over 120 to 400
±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
Publication Date : December 2013
1
INTERNAL CONNECTION
Es1 G1 TH2 TH1 Cs1 Es2 G2 Cs2
(62) (61) (57) (56) (52) (47) (46) (42)
C1
(1) Th
NTC
C1 Tr1
(2)
E2 Di1
(3)
Tr2
Di2
C1E2
(33)
C1E2
(32)
E2
(4)




Mitsubishi

CM1000DXL-24S Datasheet Preview

CM1000DXL-24S Datasheet

IGBT

No Preview Available !

< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
VCES
VGES
IC
ICM
ICRM
Ptot
IE
IEM
IERM
(Note1)
(Note1)
(Note1)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, TC=124 °C (Note2, 4)
(Note2)
Pulse, Repetitive (Note3)
TC=25 °C (Note2, 4)
DC (Note2)
(Note2)
Pulse, Repetitive (Note3)
MODULE
Symbol
Item
Conditions
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tjmax
TCmax
Tjop
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Instantaneous event (overload)
(Note4)
Continuous operation (under switching)
T s t g Storage temperature
-
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Conditions
ICES
IGES
VGE(th)
VCEsat
(Terminal)
VCEsat
(Chip)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
V (Note1)
EC
(Terminal)
V (Note1)
EC
(Chip)
t (Note1)
rr
Q (Note1)
rr
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=100 mA, VCE=10 V
IC=1000 A, VGE=15 V,
Refer to the figure of test circuit
(Note5)
IC=1000 A,
VGE=15 V,
(Note5)
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
VCE=10 V, G-E short-circuited
VCC=600 V, IC=1000 A, VGE=15 V
VCC=600 V, IC=1000 A, VGE=±15 V,
RG=0 , Inductive load
IE=1000 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
IE=1000 A,
G-E short-circuited,
(Note5)
VCC=600 V, IE=1000 A, VGE=±15 V,
RG=0 , Inductive load
T j =25 °C
T j =125 °C
T j =150 °C
T j =25 °C
T j =125 °C
T j =150 °C
Min.
-
-
5.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rating
1200
± 20
900 *
1000
2000
7500
900 *
1000
2000
Rating
2500
175
125
-40 ~ +150
-40 ~ +125
Limits
Typ.
-
-
6.0
1.85
2.05
2.10
1.70
1.90
1.95
-
-
-
2300
-
-
-
-
1.85
1.85
1.85
1.70
1.70
1.70
-
53.3
Max.
1.0
0.5
6.6
2.30
-
-
2.15
-
-
100
20
1.7
-
800
200
600
300
2.30
-
-
2.15
-
-
300
-
Unit
V
V
A
W
A
Unit
V
°C
°C
Unit
mA
μA
V
V
V
nF
nC
ns
V
V
ns
μC
Publication Date : December 2013
2


Part Number CM1000DXL-24S
Description IGBT
Maker Mitsubishi
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CM1000DXL-24S Datasheet PDF






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