Datasheet Summary
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
0.8 MIN 2.5±0.1 3.9±0.3
- IT (RMS) ..................................................................... 0.8A
- VDRM ....................................................................... 600V
- IFGT !, IRGT !, IRGT # .............................................. 5mA
- IFGT # ..................................................................... 10mA
0.5±0.07 0.4±0.07
1.5±0.1 1.5±0.1 (Back side)
+0.03
- 0.05
3 1
1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
SOT-89
APPLICATION Hybrid IC, solid state relay,...
