XL1001 Datasheet | Mimix Broadband

Features Balanced Design Excellent Input/Output Match Self-biased Architecture 14.0 d B Small Signal Gain 2.5 d B Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage balanced 17.0-35.0 GHz Ga As MMIC low noise amplifier has a small signal gain Absolute Maximum Ratings of 14.0 d B with a noise figure of 2.5 d B across the Supply Voltage (Vd) +6.0 VDC band. This MMIC uses Mimix Broadband’s 0.15 µm Supply Current (Id) 85 m A Ga As PHEMT device model technology, and is based Input Power (Pin) +15.0 d Bm upon electron beam lithography to ensure high Storage Temperature (Tstg) -65 to +165 OC repeatability and uniformity. The chip has surface Operating Temperature (Ta) -55 to MTTF Table1 passivation to protect and provide a rugged part with Channel Temperature (Tch) MTTF Table1 backside via holes and gold metallization to allow . either a conductive epoxy or eutectic solder die (1) Channel temperature affects a device's MTBF. It is remended to keep channel temperature as low as attach process. This device is well suited for possible for maximum life. Millimeter-wave Point-to-Point Radio, LMDS, SAT and VSAT applications. Data Shee Electrical Characteristics (Ambient Temperature T = 25 o C) Parameter Frequency Range (f ) Input Return Loss (S11) 3 Output Return Loss (S22) 3 Small Signal Gain (S21) 3 Gain Flatness (∆S21) Reverse Isolation (S12) 3 Noise Figure (NF) @ 21.0-35.0 GHz 3 Output Power for 1 d B pression (P1d B) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (V5) Supply Current (Id) Units GHz d B d B d B d B d B d B d Bm d Bm VDC m A Min. 17.0 8.0 15.0 12.0 25.0 Typ. 10.0 18.0 14.0 +/-1.5 30.0 2.5 +4.0 2 +16.0 2 +5.0 55 Max. 35.0 3.5 +5.5 65 (2) See plots for additional information. (3) Unless otherwise indicated min/max over 17.0-35.0 GHz and biased at Vd=5V, Id=55m A. . Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax:...