ICE10N60FP mosfet equivalent, n-channel mosfet.
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconduc.
TO-220
G
Value
10 30 340 5 50
±20 ±30
35
-55 to +150 50
Unit A A mJ A
V/ns
V
W °C Ncm
Conditions TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
D S
Symbol Parameter
Val.
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