LS845 Key Features
- Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current
- Part: LS845
- Manufacturer: Micross
- Size: 296.09 KB
Related Micross Datasheets
| Part Number | Description |
|---|---|
| LS840 | Low Drift Monolithic Dual JFET |
| LS841 | Low Drift Monolithic Dual JFET |
| LS842 | Low Drift Monolithic Dual JFET |
| LS843 | Low Drift Monolithic Dual JFET |
| LS844 | Low Drift Monolithic Dual JFET |
LS845 Description
LS845 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS845 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications.
LS845 Applications
- Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50mA Maximum Power Dissipation Device