LS845 - Low Drift Monolithic Dual JFET

Micross

Key Features

a 15mV offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS845 low drift monolithic dual jfet by Micross - Datasheet Preview

Datasheet Details

Part number	LS845
Manufacturer	Micross
File Size	296.09 KB
Description	Low Drift Monolithic Dual JFET
Datasheet	LS845 Datasheet

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LS845 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS845 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS845 features a 15mV offset and 25-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤25µV/°C LOW LEAKAGE IG = 15pA TYP. LOW NOISE en = 3nV/√Hz TYP.