Datasheet Details
| Part number | AS8ERLC128K32 |
|---|---|
| Manufacturer | Micross |
| File Size | 461.97 KB |
| Description | 128K x 32 Radiation Tolerant EEPROM |
| Datasheet |
 AS8ERLC128K32 Datasheet
|
|
|
Features
- Access time of 250ns , 300ns.
- Operation with single 3.3V (+ .3V) supply.
- LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode.
- Automatic Byte Write: 15 ms (MAX).
- Automatic Page Write (128 bytes): 15 ms (MAX).
- Data protection circuit on power -on/off.
- Low power CMOS MNOS cell Technology.
- 104 Erase/Write cycles (in Page Mode).
- Software data.