Datasheet Summary
256K x 36 SSRAM
Flow-Through, Synchronous Burst SRAM
Features
- Organized 256K x 36
- Fast Clock and OE access times
- Single +3.3V +0.3V/-0.165V power supply (VDD)
- SNOOZE MODE for reduced-power standby
- mon data inputs and data outputs
- Individual BYTE WRITE control and GLOBAL WRITE
- Three chip enables for simple depth expansion and address pipelining
- Clock-controlled and registered addresses, data I/Os and control signals
- Internally self-timed WRITE cycle
- Burst control (interleaved or linear burst)
- Automatic power-down for portable applications
- Low capacitive bus loading
- 100-lead TQFP package for high density, high speed
- RoHs pliant options available
OPTIONS
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