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AS5SS256K36 - 256K x 36 SSRAM

Description

The AS5

Features

  • Organized 256K x 36.
  • Fast Clock and OE access times.
  • Single +3.3V +0.3V/-0.165V power supply (VDD).
  • SNOOZE MODE for reduced-power standby.
  • Common data inputs and data outputs.
  • Individual BYTE WRITE control and GLOBAL WRITE.
  • Three chip enables for simple depth expansion and address pipelining.
  • Clock-controlled and registered addresses, data I/Os and control signals.
  • Internally self-timed WRITE cycle.
  • Burst control (interleaved or linear burst).

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📁 Similar Datasheet

Part Number Description Manufacturer
AS5SS256K36 256K x 36 SSRAM Flow-Through Synchronous Burst SRAM Austin Semiconductor
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AS5SS128K36 128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT Austin Semiconductor
AS5SS512K36 512K x 36 SSRAM Micross Components

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM FEATURES  Organized 256K x 36  Fast Clock and OE access times  Single +3.3V +0.3V/-0.165V power supply (VDD)  SNOOZE MODE for reduced-power standby  Common data inputs and data outputs  Individual BYTE WRITE control and GLOBAL WRITE  Three chip enables for simple depth expansion and address pipelining  Clock-controlled and registered addresses, data I/Os and control signals  Internally self-timed WRITE cycle  Burst control (interleaved or linear burst)  Automatic power-down for portable applications  Low capacitive bus loading  100-lead TQFP package for high density, high speed  RoHs compliant options available OPTIONS  Timing 7.5ns/8.5ns/117MHz 8.5ns/10ns/100MHz 10ns/15ns/66MHz MARKING -7.5 -8.
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