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AS4SD8M16 - 128 Mb: 8 Meg x 16 SDRAM

Features

  • Full Military temp (-55°C to 125°C) processing available.
  • Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks).
  • Fully synchronous; all signals registered on positive edge of system clock.
  • Internal pipelined operation; column address can be changed every clock cycle.
  • Internal banks for hiding row access/precharge.
  • Programmable burst lengths: 1, 2, 4, 8 or full page.
  • Auto Precharge, includes.

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Datasheet Details

Part number AS4SD8M16
Manufacturer Micross
File Size 6.21 MB
Description 128 Mb: 8 Meg x 16 SDRAM
Datasheet download datasheet AS4SD8M16 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 8 Meg x 16 (2 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8 or full page • Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes • Self Refresh Mode (IT & ET) • 64ms, 4,096-cycle refresh (IT) • 24ms 4,096 cycle recfresh (XT) • WRITE Recovery (tWR = “2 CLK”) • LVTTL-compatible inputs and outputs • Single +3.3V ±0.
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