Datasheet Details
| Part number | PPNHZ52F120A |
|---|---|
| Manufacturer | Microsemi (Microchip) |
| File Size | 102.84 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 PPNHZ52F120A Datasheet
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General Description
MAX.
Key Features
- Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-.