PPNGZ52F120A Datasheet | Microsemi

Features - - - - - - - - Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.42 UNIT Volts Volts Volts Volts Amps Amps m J A A Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current (pulse width limited by Tjmax,) RG= 25Ω, Tj= 25°C VCE≤ 1200V, TJ= 150°C, tsc≤ 10µ s Tj= 25°C Tj= 90°C Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µ H, Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, PPNHZ52F120A only) Pulse Source Current (Body Diode, PPNHZ52F120A only) Thermal Resistance, Junction to Case Datasheet# MSC1376.PDF PPC INC. PPNGZ52F120A PPNHZ52F120A Electrical Parameters @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) SYMBOL BVCES VGE(th) IGES ICES VCE(sat) CONDITIONS VGS = 0 V, IC = 250 µA VCE = VGE, IC = 350 µA VGE = ± 20VDC,...