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  Microsemi Electronic Components Datasheet  

PPNGZ52F120A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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PPC INC.
7516 Central Industrial Drive
Riviera Beach, FL 33404
PH: 561-842-0305
Fax: 561-845-7813
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: PPNH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (PPNHZ52F120A only)
PPNGZ52F120A
PPNHZ52F120A
TO-258
1200 Volts
52 Amps
3.2 Volts vce(sat)
N-CHANNEL
INSULATED GATE BIPOLAR
TRANSISTOR
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25°C
Tj= 90°C
Peak Collector Current (pulse width limited by Tjmax,)
Tj= 25°C
Tj= 90°C
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH,
RG= 25, Tj= 25°C
Short circuit current (SOA) , VCE1200V, TJ= 150°C, tsc10µs
Short circuit (reverse) current (RBSOA) , VCE1200V, TJ= 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, PPNHZ52F120A only)
Pulse Source Current (Body Diode, PPNHZ52F120A only)
Thermal Resistance, Junction to Case
BVCES
BVCGR
VGES
VGEM
IC25
IC90
ICM(25)
ICM(90)
EAS
IC(sc)
IC(sc)RBSOA
PD
Tj
Tstg
IS
ISM
θJC
MAX.
1200
1200
+/-20
+/-30
52
33
104
66
65
260
66
300
-55 to +150
-55 to +150
50
100
0.42
UNIT
Volts
Volts
Volts
Volts
Amps
Amps
mJ
A
A
Watts
°C
°C
Amps
Amps
°C/W
Datasheet# MSC1376.PDF


  Microsemi Electronic Components Datasheet  

PPNGZ52F120A Datasheet

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

No Preview Available !

PPC INC.
PPNGZ52F120A
PPNHZ52F120A
Electrical Parameters @ 25°C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
Forward Transconductance (1)
SYMBOL
BVCES
VGE(th)
IGES
ICES
VCE(sat)
gfs
CONDITIONS
VGS = 0 V, IC = 250 µA
MIN
1200
VCE = VGE, IC = 350 µA
VGE = ± 20VDC, VCE = 0
VCE =0.8BVCES
VGE = 0 V
VGE= 15V, IC= 25A
IC= 25A
IC= 60A
IC= 30A
VCE = 20 V; IC = 25 A
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
4.5
8.5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
VGE = 0 V, VCE = 25 V, f = 1 MHz
INDUCTIVE LOAD, Tj= 125° C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, VCE = 600 V,
IC = 25 A, RG = 47 ,
L= 100 µH note 2, 3
INDUCTIVE LOAD, Tj= 125° C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
td(on)
tri
Eon
td(off)
tfi
Eoff
VGE = 15 V, VCE = 600 V,
IC = 50 A, RG = 47 ,
L= 100 µH note 2, 3
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Qg VGE = 15 V, VCE = 600V, IC = 25A
Qge
Qgc
Antiparallel diode forward voltage (PPNHZ52F120A VF IE= 10 A
only)
IE= 10 A
TJ = 25 °C
TJ = 100 °C
Antiparallel diode reverse recovery time
(PPNHZ52F120A only)
trr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
Antiparallel diode reverse recovery charge
(PPNHZ52F120A only)
Qrr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
Antiparallel diode peak recovery current
(PPNHZ52F120A only)
IRM IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C
IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C
Notes
(1) Pulse test, t 300 µs, duty cycle δ ≤ 2%
(2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
TYP.
5.5
2.7
3.3
3.4
4.3
20
1650
250
110
75
65
3.6
420
45
2.4
95
90
10
420
45
4.2
160
20
75
2.4
2
60
800
22
MAX
6.5
±100
±200
250
1000
3.2
3.9
2200
380
160
110
100
560
60
3
TBD
TBD
TBD
UNIT
V
V
nA
µA
V
S
pF
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
nC
V
V
ns
ns
nC
nC
A
A
Datasheet# MSC1376.PDF


Part Number PPNGZ52F120A
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Maker Microsemi Corporation
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