PPNGZ52F120A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Microsemi Corporation

PPNGZ52F120A Datasheet Preview — Preview of PPNGZ52F120A PDF

Datasheet Details

Part number	PPNGZ52F120A
Manufacturer	Microsemi ↗ Corporation
File Size	102.84 KB
Description	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	PPNGZ52F120A_MicrosemiCorporation.pdf

PPNGZ52F120A Product details

Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX.1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.42 UNIT Volts Volts Volts Volts Amps Amps mJ A A Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current

Features

Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-.

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PPNHZ52F120A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Published: May 9, 2005 |