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APTGT50TDU170PG - Power-Module IGBT

Features

Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design - Lead frames for power connections.
High level of integration.
Kelvin emitter for easy drive Benefits.
Stable temperature behavior.

Microsemi (Microchip)

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APTGT50TDU170PG power-module igbt by Microsemi Corporation - Datasheet Preview

Datasheet Details

Part number	APTGT50TDU170PG
Manufacturer	Microsemi (Microchip)
File Size	281.56 KB
Description	Power-Module IGBT
Datasheet	APTGT50TDU170PG Datasheet

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Full PDF Text Transcription

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APTGT50TDU170PG Triple Dual Common Source Trench + Field Stop IGBT® Power Module C1 C3 C5 G1 G3 G5 www.DataSheet4U.

Published: Apr 11, 2010 |