APTGT50TDU170PG
APTGT50TDU170PG is Power-Module IGBT manufactured by Microsemi.
Features
- Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 k Hz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Very low stray inductance
- Symmetrical design
- Lead frames for power connections
- High level of integration
- Kelvin emitter for easy drive Benefits
- Stable temperature behavior
- Very rugged
- Solderable terminals for easy PCB mounting
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Very low (12mm) profile
- Each leg can be easily paralleled to achieve a dual mon source configuration of three times the current capability
- Ro HS pliant Max ratings 1700 70 50 100 ±20 310 100A @ 1600V Unit V A V W
July, 2006 1-5 APTGT50TDU170PG
- Rev 1
C1
C3
C5
G1 E1/E2 E1 E2 G2 E3/E4
G3 E3 E4 G4 E5/E6
G5 E5 E6 G6
C2
C4
C6
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector
- Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj =...
