• Part: APTGT50DSK120T3G
  • Description: Power-Module IGBT
  • Manufacturer: Microsemi
  • Size: 285.96 KB
Download APTGT50DSK120T3G Datasheet PDF
Microsemi
APTGT50DSK120T3G
Features - Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Kelvin emitter for easy drive - Low stray inductance - High level of integration - Internal thermistor for temperature monitoring Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Easy paralleling due to positive TC of VCEsat - Each leg can be easily paralleled to achieve a single buck of twice the current capability. - Ro HS pliant 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD...