• Part: APTGF180DH60G
  • Description: Asymmetrical - bridge NPT IGBT Power Module
  • Manufacturer: Microsemi
  • Size: 301.85 KB
Download APTGF180DH60G Datasheet PDF
Microsemi
APTGF180DH60G
Features - Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 k Hz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Kelvin emitter for easy drive - Very low stray inductance - Symmetrical design - M5 power connectors - High level of integration Benefits - Outstanding performance at high frequency operation - Stable temperature behavior - Very rugged - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Easy paralleling due to positive TC of VCEsat - Low profile - Ro HS pliant Max ratings 600 220 180 630 ±20 833 400A @ 600V Unit V A V W July, 2006 1-6 APTGF180DH60G - Rev 2 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage...