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APT50GT120LR - Thunderbolt IGBT

Download the APT50GT120LR datasheet PDF. This datasheet also covers the APT50GT120B2R variant, as both devices belong to the same thunderbolt igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Forward Voltage Drop.
  • Low Tail Current.
  • RoHS Compliant.
  • RBSOA and SCSOA Rated.
  • High Frequency Switching to 50KHz.
  • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Em.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT50GT120B2R_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
APT50GT120B2R(G) www.DataSheet4U.com APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. Features • Low Forward Voltage Drop • Low Tail Current • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.