APT50GT120B2RDQ2G Datasheet | Microsemi

Features - Low Forward Voltage Drop - Low Tail Current - Ro HS pliant - RBSOA and SCSOA Rated - High Frequency Switching to 50KHz - Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. Ratings 1200 ±30 94 50 150 150A @ 1200V 625 -55 to 150 300 °C Watts Amps Volts Unit Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec. Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3m A) Gate Threshold Voltage (VCE = VGE, IC = 2m A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) Min 1200 4.5 2.7 - Typ 5.5 3.2 4.0 - Max 6.5 3.7 300 TBD 300 Unit Volts ICES IGES Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) μA n A 052-6289 Rev B 6-2008 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://.microsemi. Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge...