APT30GN60KG Datasheet | Microsemi

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K .. APT30GN60KG- - G Denotes Ro HS pliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. TO-220 - 600V Field Stop - - - - Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current All Ratings: TC = 25°C unless otherwise specified. APT30GN60K(G) UNIT Volts 600 ±30 63 37 75 75A @ 600V 203 -55 to 175 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2m A) Gate Threshold Voltage (VCE = VGE, I C = 430µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.1 5.8 1.5 1.7 25 6.5 1.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) I CES I GES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) µA n A 7-2008 052-6296 Rev A Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1000 300 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be...