2N6546 Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/525 Devices .. Qualified Level 2N6547 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCEX VEBO IB IC PT Top, Tstg Symbol 2N6546 300 600 2N6547 400 850 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W - See Appendix A for Package Outline @ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Temperature Range 8 10 15 175 100 -65 to +200 TO-3 (TO-204AA)- THERMAL CHARACTERISTICS Max. 1.0 RθJC 1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C Characteristics Thermal Resistance, Junction-to-Case ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 m Adc Collector-Emitter Cutoff Current VCE = 600 Vdc; VBE = 1.5 Vdc VCE = 850 Vdc; VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 8 Vdc 2N6546 2N6547 2N6546 2N6547 V(BR)CEO 300 400 1.0 1.0 1.0 Vdc ICEX IEBO m Adc m Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6546, 2N6547 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 1 Adc; VCE = 2 Vdc IC = 5 Adc; VCE = 2 Vdc IC = 10 Adc; VCE = 2 Vdc Base-Emitter Saturated Voltage IB = 2.0 Adc; IC = 10 Adc Collector-Emitter Saturated Voltage .. IB = 2.0 Adc; IC = 10 Adc IB = 3.0 Adc; IC = 15 Adc h FE 15 12 6 60 Vdc Vdc VBE(sat) VCE(sat) 1.6 1.5 5.0 DYNAMIC CHARACTERISTICS Magnitude of mon-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe 6.0 Cobo 30 500 1.0 4.7 p F SWITCHING CHARACTERISTICS...