2N5004
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534 Devices 2N5002 2N5004 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
..
Symbol
VCEO VCBO VEBO IC IC(3) PT TJ, Tstg Symbol RθJC
Value
80 100 5.5 5.0 10 2.0 58 -65 to +200 Max. 3.0 88
Units
Vdc Vdc Vdc Adc W
Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1) Derate linearly 11.4 m W/ C for TA > 25 C 2) Derate linearly 331 m W/0C for TC > 250C 3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
Unit 0 C/W
TO-59-
RθJA
C/W
- See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol V(BR)CEO ICEO ICES Min. 80 50 1.0 1.0 1.0 1.0 Max. Unit Vdc µAdc µAdc m Adc m Adc m...
