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UM7506 - POWER PIN DIODES

Download the UM7506 datasheet PDF. This datasheet also covers the UM7500 variant, as both devices belong to the same power pin diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The UM7500 series

Key Features

  • Microsemi’s innovative passivated chip design which takes advantage of the latest silicon wafer bonding and junction passivation techniques. This new series of PIN diodes incorporates all of the desirable RF properties of previous Microsemi diodes plus extremely low leakages and very stable reverse characteristics. Power dissipation capability is assured by Microsemi’s metallurgically bonded, fused in glass construction. This technique continues to be the optimum approach for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (UM7500-Microsemi.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
UM7500 POWER PIN DIODES
UM7501 POWER PIN DIODES
UM7502 POWER PIN DIODES
UM7504 POWER PIN DIODES
UM7508 POWER PIN DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WWW.Microsemi .COM UM7500 POWER PIN DIODES DESCRIPTION The UM7500 series features Microsemi’s innovative passivated chip design which takes advantage of the latest silicon wafer bonding and junction passivation techniques. This new series of PIN diodes incorporates all of the desirable RF properties of previous Microsemi diodes plus extremely low leakages and very stable reverse characteristics. Power dissipation capability is assured by Microsemi’s metallurgically bonded, fused in glass construction. This technique continues to be the optimum approach for applications requiring reliable, high power diodes. Low leakage distortion is achieved by maintaining high carrier lifetime and accurately controlling I-region thickness throughout the process.