The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PRELIMINARY
MXP4000 Series
OPTO ELECTRONIC PRODUCTS
InGaAs/InP PIN Photodiode Chips
P RODUCT P REVIEW
DESCRIPTION
KEY FEATURES
W W W . Microsemi . COM
Microsemi’s InGaAs/InP PIN Photodiode chips are ideal for wide bandwidth 1310nm and 1550nm optical networking applications. The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 156 Mb/sec (active area of 300um2), 622 Mb/sec (active area of 200 um2), 2.5 Gb/sec (active area of 75 um2), 10 Gb/sec (active area of 40 um2),
The MXP4000 series of photodiodes are originally offered in die form for manufacturers of optical transponders, supervisory VCSEL monitoring circuits, and combination PIN Photodiode-transimpedance amplifier hybrids.