MX043J mosfet equivalent, radiation hardened segr-resistant n-channel enhancement mode power mosfet.
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* Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD.
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25° C
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS PD Tj Tstg IS ISM θJC MAX. 200 200 +/-20 +/-30 4.
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