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MSC2X51SDA070J Dual Silicon Carbide Schottky Barrier Diodes

MSC2X51SDA070J Description

MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product l.

MSC2X51SDA070J Features

* The following are key features of the MSC2X51SDA070J and MSC2X50SDA070J devices:
* No reverse recovery
* Low forward voltage
* Low leakage current
* Avalanche-energy rated
* RoHS compliant
* Isolated voltage to 2500 V Benefits The following are benefit

MSC2X51SDA070J Applications

* MSC2X51/50SDA070J are dual 700 V, 50 A SiC SBD devices in a SOT-227 package. Figure 1
* Parallel MSC2X51SDA070J Figure 2

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Dual Silicon Carbide Schottky Barrier Diodes Microsemi
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