Datasheet Summary
MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes
Product Overview
The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA070J are dual 700 V, 50 A SiC SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X51SDA070J
Figure 2
- Anti-parallel MSC2X50SDA070J
Features
The following are key Features of the MSC2X51SDA070J and MSC2X50SDA070J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
Benefits
The...