MSC2X51SDA070J
Overview
The Silicon Carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA070J are dual 700 V, 50 A Si C SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X51SDA070J
Figure 2
- Anti-parallel MSC2X50SDA070J
Features
The following are key features of the MSC2X51SDA070J and MSC2X50SDA070J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
- Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X51SDA070J and MSC2X50SDA070J devices:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density
- Direct mounting to the heat sink (isolated package)
053-4105 MSC2X51/50SDA070J Datasheet Revision A
Product Overview
Applications
The MSC2X51SDA070J and...
