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MSC2X50SDA120J Datasheet Dual Silicon Carbide Schottky Barrier Diodes

Manufacturer: Microsemi (now Microchip Technology)

Overview: MSC2X51/50SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA120J are dual 1200 V, 50 A SiC SBD devices in a SOT-227 package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • The following are key features of the MSC2X51SDA120J and MSC2X50SDA120J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA120J and MSC2X50SDA120J devices:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.

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