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MSC2X50SDA070J - Dual Silicon Carbide Schottky Barrier Diodes

Download the MSC2X50SDA070J datasheet PDF. This datasheet also includes the MSC2X51SDA070J variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSC2X51SDA070J-Microsemi.pdf) that lists specifications for multiple related part numbers.

Overview

MSC2X51/50SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications.

MSC2X51/50SDA070J are dual 700 V, 50 A SiC SBD devices in a SOT-227 package.

Key Features

  • The following are key features of the MSC2X51SDA070J and MSC2X50SDA070J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X51SDA070J and MSC2X50SDA070J devices:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
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MSC2X51SDA120J Dual Silicon Carbide Schottky Barrier Diodes
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