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MSC2X31SDA120J - Dual Silicon Carbide Schottky Barrier Diodes

Features

  • The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X31SDA120J and MSC2X30SDA120J devices:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction-to-cas.

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Other Datasheets by Microsemi (Microchip)

Part Number Description
MSC2X31SDA170J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X31SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X30SDA070J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X30SDA120J Dual Silicon Carbide Schottky Barrier Diodes
MSC2X30SDA170J Dual Silicon Carbide Schottky Barrier Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package.
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