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MSC2X30SDA170J - Dual Silicon Carbide Schottky Barrier Diodes

Download the MSC2X30SDA170J datasheet PDF. This datasheet also covers the MSC2X31SDA170J variant, as both devices belong to the same dual silicon carbide schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MSC2X31SDA170J-Microsemi.pdf) that lists specifications for multiple related part numbers.

Overview

MSC2X31/30SDA170J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications.

MSC2X31/30SDA170J are dual 1700 V, 30 A SiC SBD devices in a SOT-227 package.

Key Features

  • The following are key features of the MSC2X31SDA170J and MSC2X30SDA170J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X31SDA170J and MSC2X30SDA170J devices:.
  • Outstanding performance at high-frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction-to-cas.

More Datasheets from Microsemi (now Microchip Technology)

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