MSC2X101SDA120J
MSC2X101SDA120J is Dual Silicon Carbide Schottky Barrier Diode manufactured by Microsemi.
MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode
Product Overview
The Silicon Carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101/100SDA120J are dual 1200 V, 100 A Si C SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X101SDA120J
Figure 2
- Anti-parallel MSC2X100SDA120J
Features
The following are key Features of the MSC2X101SDA120J and MSC2X100SDA120J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
- Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density
- Direct mounting to the heat sink (isolated package)
053-4109 MSC2X101/100SDA120J Datasheet Revision A
Product Overview
Applications
The MSC2X101SDA120J and MSC2X100SDA120J devices are designed for the following applications:
- Power factor correction (PFC)
- Anti-parallel diode
◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor...
