MSC2X101SDA120J Overview
MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X101/100SDA120J are dual 1200 V, 100 A SiC SBD devices in a SOT-227 package. Figure 1 Parallel MSC2X101SDA120J...
MSC2X101SDA120J Key Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems