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MSC2X100SDA120J - Dual Silicon Carbide Schottky Barrier Diode

Download the MSC2X100SDA120J datasheet PDF. This datasheet also covers the MSC2X101SDA120J variant, as both devices belong to the same dual silicon carbide schottky barrier diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MSC2X101SDA120J-Microsemi.pdf) that lists specifications for multiple related part numbers.

Overview

MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications.

MSC2X101/100SDA120J are dual 1200 V, 100 A SiC SBD devices in a SOT-227 package.

Key Features

  • The following are key features of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant.
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.

More Datasheets from Microsemi (now Microchip Technology)

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