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MSC010SDA170B - Zero Recovery Silicon Carbide Schottky Diode

Features

  • The following are key features of the MSC010SDA170B device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC010SDA170B device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Datasheet Details

Part number MSC010SDA170B
Manufacturer Microsemi
File Size 1.24 MB
Description Zero Recovery Silicon Carbide Schottky Diode
Datasheet download datasheet MSC010SDA170B Datasheet
Additional preview pages of the MSC010SDA170B datasheet.

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Full PDF Text Transcription

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MSC010SDA170B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA170B device is a 1700 V, 10 A SiC SBD in a TO-247 package.
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