Datasheet Summary
® TM
Packaged and Bondable Chips
GaAs Schottky Diodes
MS8001
- MS8004
Features
- Low-Noise Performance
- High Cut-off Frequency
- Passivated to Enhance Reliability
- Packaged Diodes and Bondable Chips
Applications
- Single and Balanced Mixers and Detectors
- Transceivers X, K and Ka Bands
- 30 and 60 GHz Radios
- Automotive Radar Detectors
Maximum Ratings
Incident Power
Forward Current Reverse Voltage Operating Temperature Storage Temperature
100 mW @ 25°C Derate Linearly to 0 at 175°C
15 mA @ 25°C 5V -55°C to +175°C -55°C to +200°C
Description
Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky...