Datasheet4U Logo Datasheet4U.com

MS8002 - GaAs Schottky Diodes

This page provides the datasheet information for the MS8002, a member of the MS8001 GaAs Schottky Diodes family.

Description

Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations.

These Schottky devices have low series resistance and low junction capacitance.

Features

  • Low-Noise Performance.
  • High Cut-off Frequency.
  • Passivated to Enhance Reliability.
  • Packaged Diodes and Bondable Chips.

📥 Download Datasheet

Datasheet preview – MS8002

Datasheet Details

Part number MS8002
Manufacturer Microsemi
File Size 308.22 KB
Description GaAs Schottky Diodes
Datasheet download datasheet MS8002 Datasheet
Additional preview pages of the MS8002 datasheet.

📁 Similar Datasheet

  • MS8000 - Single axis analog accelerometer (SAFRAN)
  • MS80 - Surface Mount Si-Bridge-Rectifiers (Diotec Semiconductor)
  • MS8051 - CMOS Operational Amplifier (Ruimeng)
  • MS8052 - CMOS Operational Amplifier (Ruimeng)
  • MS8054 - CMOS Operational Amplifier (Ruimeng)
  • MS808C06 - Schottky Barrier Diode (Fuji Electric)
  • MS809 - Schottky Diodes (Infineon Technologies)
  • MS8091 - 350MHz Rail-to-Rail Operational Amplifier (Ruimeng)
  • MS8092 - 350MHz Rail-to-Rail Operational Amplifier (Ruimeng)
  • MS8093 - 350MHz rail-to-rail operational amplifier (Ruimeng)
Other Datasheets by Microsemi

Full PDF Text Transcription

Click to expand full text
® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enhance Reliability ● Packaged Diodes and Bondable Chips Applications ● Single and Balanced Mixers and Detectors ● Transceivers X, K and Ka Bands ● 30 and 60 GHz Radios ● Automotive Radar Detectors Maximum Ratings Incident Power Forward Current Reverse Voltage Operating Temperature Storage Temperature 100 mW @ 25°C Derate Linearly to 0 at 175°C 15 mA @ 25°C 5V -55°C to +175°C -55°C to +200°C Description Microsemi’s MS8000 series of GaAs Schottky barrier diodes are available in packaged form and bondable chip configurations. These Schottky devices have low series resistance and low junction capacitance.
Published: |