MS1226 applications equivalent, rf & microwave transistors hf ssb applications.
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* 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1226 is a 28V epitaxi.
Features
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* 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMIT.
The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS
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VCBO VCEO VEBO IC PDISS TJ T STG.
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