MG1040, MG1001 - GUNN Diodes

Microsemi

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MG1040 Datasheet Preview — This datasheet PDF includes multiple part numbers: MG1040, MG1001. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MG1040, MG1001
Manufacturer: Microsemi ↗
File Size: 205.73 KB
Datasheet: MG1001-Microsemi.pdf
Description: GUNN Diodes
Note: This datasheet PDF includes multiple part numbers: MG1040, MG1001.
Please refer to the document for exact specifications by model.

MG1040 Product details

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process.. 95 GHz..

Features

CW Designs to 500 mW.
Pulsed Designs to 10 W.
Frequency Coverage Specified from 5.9.
95 GHz.
Low Phase Noise.
High Reliability.

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GUNN Diodes Microsemi

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MG1040 Stock/Price