Datasheet4U Logo Datasheet4U.com

MG1038, MG1001 Datasheet - Microsemi

MG1038 GUNN Diodes

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a varie.

MG1038 Features

* CW Designs to 500 mW

* Pulsed Designs to 10 W

* Frequency Coverage Specified from 5.9

* 95 GHz

* Low Phase Noise

* High Reliability Applications

* Motion Detectors

* Transmitters and Receivers

* Beacons

* Automotive Collision Avoidance Radars

* Radars

MG1001-Microsemi.pdf

This datasheet PDF includes multiple part numbers: MG1038, MG1001. Please refer to the document for exact specifications by model.
MG1038 Datasheet Preview Page 2 MG1038 Datasheet Preview Page 3

Datasheet Details

Part number:

MG1038, MG1001

Manufacturer:

Microsemi ↗

File Size:

205.73 KB

Description:

Gunn diodes.

Note:

This datasheet PDF includes multiple part numbers: MG1038, MG1001.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

MG103 single-chip microprocessors (Megawin Technology)

MG1034 GUNN Diodes (Microsemi)

MG1036 GUNN Diodes (Microsemi)

MG1037 GUNN Diodes (Microsemi)

MG1039 GUNN Diodes (Microsemi)

MG100 Metal Glaze Resistors (HITANO)

MG1001 GUNN Diodes (Microsemi)

MG1001 GaAs Hall (Matrixopto)

TAGS

MG1038 MG1001 GUNN Diodes Microsemi

MG1038 Distributor