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MG1012 Datasheet, Microsemi

MG1012 diodes equivalent, gunn diodes.

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MG1012 Datasheet

Features and benefits


* CW Designs to 500 mW
* Pulsed Designs to 10 W
* Frequency Coverage Specified from 5.9
  –95 GHz
* Low Phase Noise
* High Reliability Ap.

Application


* Motion Detectors
* Transmitters and Receivers
* Beacons
* Automotive Collision Avoidance Radars
* .

Description

Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1.

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TAGS

MG1012
GUNN
Diodes
MG1010
MG1011
MG1013
Microsemi

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